| PART |
Description |
Maker |
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| STL8N80K5 |
N-channel 800 V, 0.8 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in a PowerFLAT(TM) 5x6 VHV package
|
ST Microelectronics
|
| STB9NK80Z |
Automotive-grade N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package
|
ST Microelectronics
|
| STL7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 3.6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in a PowerFLAT(TM) 5x6 VHV package
|
ST Microelectronics
|
| IRFD320 FN2325 |
500 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
0.5A 400V 1.800 Ohm N-Channel Power MOSFET
0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
From old datasheet system
0.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| 2N6790 |
3.5A/ 200V/ 0.800 Ohm/ N-Channel Power
3.5A 200V 0.800 Ohm N-Channel Power
3.5A, 200V, 0.800 Ohm, N-Channel Power
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| SML8075AN-QR-D SML8075HN SML8075HN-JQR SML8075HNR1 |
11.5 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
11.5 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA TO-258, 3 PIN
|
TT electronics Semelab, Ltd.
|
| SXL-189-EB |
800-1000 MHz, 50 Ohm power MMIC amplifier. High linearity performance: 42dBm typ. at 900 MHz. Eval board.
|
Stanford Microdevices
|
| RF1S9630SM IRF9630 FN2224 |
6.5A/ 200V/ 0.800 Ohm/ P-Channel Power MOSFETs
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
From old datasheet system
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
|
